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Issue №5, 2014 г.
GENERAL PHYSICS
Laser generation in the structures with CdHgTe quantum wells
The authors:
A. V. Voitsekhovskii and D. I. Gorn
5
Analogies between exoelectroniс photoemission and secondary ionic photoeffect in semiconductors
The authors:
A. G. Rokakh, M. I. Shishkin, S. B. Venig, M. D. Matasov, and V. S. Atkin
11
Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method
The authors:
M. V. Logunov, V. A. Neverov, and B. F. Mamin
15
PLASMA PHYSICS AND PLASMA METHODS
Investigation of dust particles, forming by complex oxide sputtering in oxygen radiofrequency discharge
The authors:
P. S. Plyaka, S. H. Alikhadjiev, and G. N. Tolmachev
19
ELECTRON, ION, AND LASER BEAMS
Plasma-beam superheterodyne FELs with helical electron beams
The authors:
V. V. Kulish, A. V. Lysenko, G. A. Oleksiienko, V. V. Koval, and M. Yu. Rombovsky
24
Bremsstrahlung of electrons passing through the multilayer structure of Coulomb centers and accelerated by a homogeneous electric field
The authors:
V. I. Krylov and V. V. Khomyakov
29
Improvement of technology of continuous extraction of rocks with the use of laser radiation
The authors:
A. Y. Cheban, N. P. Khrunina, and N. A. Leonenko
34
PHOTOELECTRONICS
Analytical approach to the selection of the optimal structure of avalanche heterophotodiodes on the basis of direct bandgap semiconductors
The authors:
V. A. Kholodnov, I. D. Burlakov, and A. A. Drugova
38
Optimization of growth conditions for improvement of parameters of photoreceivers and solar cells with quantum dots
The authors:
A. V. Voytsekhovskiy, A. P. Kokhanenko, and K. A. Lozovoy
45
The current-voltage characteristics of photodiodes of the planar type FPA based on p-InP/InGaAs/n-InP structure
The authors:
V. M. Akimov, D. S. Andreev, S. S. Demidov, N. A. Irodov, and E. A. Klimanov
50
Research of main photoelectric characteristics of the 320x256 InGaAs FPA’s
The authors:
D. L. Baliev, P. S. Lazarev, and K. O. Boltar
54
On the possibility of the plasma resonance in CdS-PbS films in the middle infrared region
The authors:
A. G. Rokakh, M. I. Shishkin, A. A. Skaptsov, and V. A. Puzynya
58
Investigation of the heteroepitaxial CdHgTe structures by spectroscopic ellipsometry
The authors:
P. S. Skrebneva, I. D. Burlakov, and N. I. Iakovleva
61
Investigation of the surfaces of CdхHg1-хТе epitaxial heterostructures after etching
The authors:
A. S. Kashuba, E. V. Permikina, and S. V. Golovin
67
Investigation of growing conditions of Cd1-xZnxTe (х < 0.04) single crystals by the vertical directed сrystallization (Bridgman) method
The authors:
M. B. Grishechkin, I. A. Denisov, A. A. Silina, N. A. Smirnova, and N. I. Shmatov
72
Influence of the Sm atom impurity and gamma irradiation on photoconductivity spectrum of layered GeS monocrystals
The authors:
R. S. Madatov, A. C. Alekbarov, O. M. Hasanov, and R. B. Bayramov
76
PHYSICAL APPARATUS AND ITS ELEMENTS
High-aperture dual-band infrared lens
The authors:
E. A. Bedareva, L. I. Gorelik, A. A. Kolesova, A. V. Polesskiy, N. A. Semenchenko, A. I. Shketov
80
Modeling objects brightness fields against the background of the broken cloud cover of atmosphere at observing from a lower hemisphere
The authors:
D. T. Tiranov, A. A. Guseva, and V. L. Philippov
85
INFORMATION
Rules for authors
The authors:
88
Three Volumes on Photoelectronics
The authors:
90
Subscription
The authors:
92