Characteristics of MOSFET capacitors formed by deposition of ZrO2: Y2O3 dielectric layers on Ge/Si(001) heterostructures grown by HW CVD
The authors: Titova A. M., Alyabina N. A., Denisov S. A., Chalkov V. Yu., Shengurov V. G., Nezhdanov A. V., Zdoroveishchev A. V., Arkhipova E. A. and Buzynin Yu. N.
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