Impact of graded-gap layer on the admittance of MIS structures based on MBE n-Hg1-xCdxTe (x = 0.22—0.23) with Al2O3 insulator
The authors: A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil’ev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, M. V. Yakushev, G. Yu. Sidorov
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