RU / EN

Issue №4, 2015 г.

GENERAL PHYSICS

Influence of Al ions on optical and kinetic properties of (Pb, Gd)3(Al, Ga)5O12: Ce epitaxial films
The authors: D. А. Vasil’ev, К. А. Vereshchagin, А. К. Vereshchagin, D. А. Spassky, V. O. Sokolov, A. V. Khakhalin, N. V. Vasil’eva, A. M. Galstyan, and V. G. Plotnichenko
5
Change-over and memory effects in the layered GeS monocrystals
The authors: R. S. Madatov, A. S. Alekperov, and O. M. Hasanov
11
About the practical implementation of same time-of-flight measurements scheme in cathodoluminescence microscopy
The authors: А. N. Polyakov, M. Noltemeyer, T. Hempel, J. Christen, and M. A. Stepovich
16
Modeling of the electrostatic field of the charged non-conducting torus
The authors: Y. N. Tashayev
21

PLASMA PHYSICS AND PLASMA METHODS

Transformation of dust structures in a dc discharge in neon
The authors: V. V. Shumova, D. N. Polyakov, and L. M. Vasilya
27
Influence of frequency of a field on features of plasma treatment of polymers
The authors: V. V. Marusin and V. G. Shchukin
33
Influence of gas heating on the voltage-current characteristic of an electron beam generator based on a stationary open discharge
The authors: A. I. Golovin
39
Mass-to-charge ion composition of arc discharge plasma in a forevacuum wide-aperture electron source
The authors: A. V. Tyunkov, V. A. Burdovitsin, A. V. Kazakov, A. V. Medovnik, and E. M. Oks
45
Optical investigations of spark channels in soil under spreading of pulse current
The authors: V. V. Ivonin, A. N. Danilin, B. V. Efimov, V. V. Kolobov, V. N. Selivanov, L. M. Vasilyak, S. P. Vetchinin, V. Ya. Pecherkin, and E. E. Son
50

PHOTOELECTRONICS

Characteristics of the germanium avalanche photodiode subjected to a high power laser irradiation
The authors: А. А. Koronnov, G. M. Zverev, М. М. Zemlyanov, E. V. Zharicova, and D. V. Marsagishvili
54
Correlator’s properties for thermal and photoinduced stochastic fields of mobile charge carriers concentrations and currents in IR photodiodes
The authors: A. Yu. Selyakov, I. D. Burlakov, and A. M. Filachev
59
Research of characteristics mesa structures of the matrixes of p–i–n diodes based on the AlxGa1-xN heteroepitaxial structures
The authors: D. V. Smirnov, K. O. Boltar, M. V. Sednev, and Y. P. Sharonov
66
Study of the InGaAs planar p–i–n photodiode focal plane array with p–n junctions of reduced sizes
The authors: N. B. Zaletaev, K. O. Boltar, A. A. Lopukhin, I. V. Chinareva, and E. V. Gabbasova
71
Photodetector photocathode with a Schottky barrier based on the InP/InGaAs/InP: Ag structure sensitive up to 1.7 μm
The authors: Y. K. Gruzevich, Y. N. Gordienko, L. M. Balyasnyi, P. S. Alkov, V. Y. Ivanov, A. L. Diatlov, and P. I. Vatcenko
76
Development of the solar-blind range photocathodes based on aluminum gallium nitride heterostructure fabricated by molecular beam epitaxial
The authors: Y. K. Gruzevich, Y. N. Gordienko, L. M. Balyasnyi, O. V. Chistov, P. S. Alkov, D. A. Shirokov, V. N. Zhmerik, D. V. Nechayev, and S. V. Ivanov
82
Quality requirements to the windows’ optical surfaces for the non-cooled ultraviolet and infrared photodetectors
The authors: A. A. Kolesova, A. V. Lobachyov, N. A. Solomonova, and K. A. Khamidullin
88

PHYSICAL APPARATUS AND ITS ELEMENTS

Using Monte Carlo method for uncertainty analysis of SWIR FPA spectral response measurement
The authors: A. D. Deomidov, A. V. Polesskiy, N. A. Semenchenko, V. C. Tresak, and A. A. Smirnov
94
Impact of the low-frequency noise on measurement accuracy of a signal for photodetectors of the second and third generations
The authors: A. D. Deomidov, K. V. Kozlov, A. V. Polesskiy, N. A. Solomonova, and Yu. A. Firsenkova
102

INFORMATION

Three Volumes on Photoelectronics
The authors:
109
Rules for authors
The authors:
111