RU / EN

Issue №1, 2014 г.

CONTENTS

Conversion of SiF4 to fluorosilanes and monosilane in plasma of volume self-sustained discharge
The authors: V. I. Aksinin, S. Yu. Kazantsev, I. G. Kononov, E. M. Kudryavtsev, A. A. Orlov, S. V. Podlesnykh, K. N. Firsov, O. D. Khorozova
5
Plasma parameters investigation of the RF inductive plasma source with diameter 46 cm. Part II. Plasma parameters numerical simulation of the inductive and hybrid RF discharges
The authors: A. F. Aleksandrov, K. V. Vavilin, E. A. Kralkina, P. A. Neklyudova, and V. B. Pavlov
9
On the issue of realization of the plasma-optical mass separation
The authors: V. M. Bardakov, S. D. Ivanov, A. V. Kazantsev, and N. A. Strokin
12
Configurations for pulsed repetitively-rated plasma relativistic microwave oscillators
The authors: S. E. Ernyleva and O. T. Loza
17
Measurements of electron temperature of microplasma discharges developing on the surface of titanium with 100 A pulse electric current
The authors: V. A. Ivanov, M. E. Konyzhev, A. M. Zimin, V. I. Troinov, T. I. Kamolova, and A. A. Letunov
21
Structure and some properties of dust particles in the arc discharge plasma
The authors: N. A. Smolanov, N. A. Pankin, V. V. Batin, and E. P. Pavkina
30
Экспериментальное исследование массового уноса жидкого электролитного катода под воздействием газового разряда
The authors: R. N. Tazmeeva and B. Kh. Tazmeev
35
Analytical model for parameters calculation of photo receiver with photodiode focal plane array
The authors: A. I. Patrashin, I. D. Burlakov, M. D. Korneeva, and V. V. Shabarov
38
Planar photodiodes FPA of heteroepitaxial structure on basis of InGaAs/InP
The authors: D. S. Andreev, K. O. Boltar, P. V. Vlasov, N. A. Irodov, and A. A. Lopuhin
47
Investigation of 10x1024 MCT SWIR TDI FPA
The authors: V. D. Bochkov, B. N. Drazhnikov, P. A. Kyznetsov, K. V. Kozlov, and V. N. Solyakov
53
Temporal and dimensional data conversion of TDI infrared photodetector
The authors: V. D. Bochkov, B. N. Drazhnikov, P. A. Kyznetsov, K. V. Kozlov, and V. N. Solyakov
58
Comparative analyses of pixel level ADC for IR FPA
The authors: P. A. Kuznetsov and I. S. Moshchev
63
Influence of transition elements impurities on dark currents of the silicon photodiodes
The authors: S. S. Demidov, E. A. Klimanov, T. G. Kolesnilova, and A. A. Smirnov
68
Study of dark currents of focal plane for InGaAs/InP
The authors: D. S. Andreev, A. A. Lopukhin, P. E. Khakuashev, and I. V. Chinareva
74
Performance evaluation of the information problems solving by staring type optical-electronic system with infrared focal plane array in laser irradiation field
The authors: M. V. Sakharov and J. J. Аstrauskas
78
Research of influence of microcryogenic system on quality of optical-electronic systems
The authors: A. V. Polesskii, A. V. Samvelov, N. A. Semenchenko, E. A. Smirnova, K. A. Khamidullin
83

INFORMATION

XXIII International Conference on Photoelectronics and Night Vision Devices (May 28-30, 2014, Moscow,)
The authors:
88
Rules for Authors
The authors:
89