Article: Numerical simulation of hot electrons field emission from silicon microcathode.

V. A. Fedirko
Moscow State University of technology “Stankin”

Yu. N. Karamzin, S. V. Polyakov, and I.G. Zakharova
Institute for Mathematical Modelling RAN

Two-dimensional quasi-hydrodynamic model of hot electron field emission from silicon microcathode is developed. An original numerical method is suggested which ensures the conservatism and the weak monotony of a finite difference decision. The steady-state of the emitting cathode have been simulated. The results are essential for the vacuum microelectronics technology of effective silicon field emitter arrays.